SSD 990 SSD 1TB PCIe 4.0x 4 NVMe 2.0
263,83 €
VAT included · Delivery to mainland Spain and the Balearic Islands
Shipping: 3,63 €
Typical transit after dispatch: 24 h to mainland Spain and 48 h to the Balearic Islands. Estimate depends on destination and availability.
In stock
Total including shipping: 267,46 € · Free shipping from 310,01 €
Samsung 990 MZ-V9V1T0BW is a 1 TB internal SSD for an M.2 2280 slot, using PCIe Gen 4.0 x4 and NVMe 2.0. The manufacturer specifies sequential read speeds up to 7,450 MB/s and sequential write speeds up to 6,900 MB/s.
About this product
The Samsung 990 MZ-V9V1T0BW is a 1 TB internal SSD in the M.2 2280 form factor. It uses a PCIe Gen 4.0 x4 interface with NVMe 2.0, so it is intended for systems that provide this type of connection. Manufacturer specifications list sequential read performance of up to 7,450 MB/s and sequential write performance of up to 6,900 MB/s. It uses Samsung V-NAND 3-bit MLC storage memory and includes 1 GB of Low Power DDR4 SDRAM cache. Its listed features include AES 256-bit encryption, S.M.A.R.T., automatic garbage collection, Device Sleep Mode and Magician management software.
What can you use it for?
- It can be used as internal storage in a system with an M.2 2280 PCIe Gen 4.0 x4 slot.
Its strengths
- 1 TB capacity in the M.2 2280 form factor.
- Specified sequential read speed of up to 7,450 MB/s.
Things to consider before buying
- It requires an M.2 2280 connection compatible with PCIe Gen 4.0 x4 and NVMe 2.0.
Product questions
What capacity does this Samsung 990 SSD provide?
It provides 1 TB, stated as 1,000 GB in the manufacturer information.
What form factor and interface does it use?
It uses the M.2 2280 form factor and PCIe Gen 4.0 x4 with NVMe 2.0.
ALMC analysis prepared with AI assistance using the supplier’s product information. It is not a product test or a customer review. Check the specifications and confirm the compatibility you need.
Technical specifications
| Marca | Samsung |
| Modelo | MZ-V9V1T0BW |
| Características | - Tipo: SSD interno - Capacidad: 1 TB (1.000 GB) - Interfaz: PCIe Gen 4.0 x4, NVMe 2.0 - Factor de forma: M.2 2280 - Velocidad de lectura secuencial: hasta 7.450 MB/s - Velocidad de escritura secuencial: hasta 6.900 MB/s - Lectura aleatoria (4KB, QD32): hasta 1.200.000 IOPS - Escritura aleatoria (4KB, QD32): hasta 1.550.000 IOPS - Memoria de almacenamiento: Samsung V-NAND 3-bit MLC - Memoria caché: 1 GB Low Power DDR4 SDRAM - MTBF: 1.500.000 horas - Encriptación: AES 256 bits (Clase 0), TCG/Opal, IEEE1667 - TRIM - S.M.A.R.T. - Garbage Collection automático - Device Sleep Mode - Voltaje soportado: 3,3 V ± 5% - Temperatura operativa: 0 a 70 °C - Resistencia a golpes: 1.500 G - Software de gestión: Magician - Consumo medio: 5,4 W - Consumo máximo: 7,8 W - Consumo en reposo: 50 mW Dimensiones y peso - 80 x 22 x 2,3 mm - 9 g |
| Fecha de revisión | 14-08-2026 por IS |
Product identifiers
| Reference | IAIDSO0983 |
|---|---|
| EAN | 8806099020699 |
| Part number | MZ-V9V1T0BW |
| Manufacturer | Samsung |
Delivery, returns and warranty
We deliver to mainland Spain and the Balearic Islands. Shipping costs are shown before payment.
14 calendar days to withdraw without giving a reason. See conditions and exceptions. How it works.
3-year statutory warranty.
